ALD Products - Materials

APPLICATIONS   MATERIALS   SYSTEMS

Aluminum Oxide and Other Dielectric Materials
Genus announced the availability of atomic layer deposition (ALD) of aluminum oxide in 1999. ALD has many possible applications in the semiconductor market including DRAM capacitors or gate structures as a high dielectric-constant (high-k) oxide, and as an etch stop for advanced structures, or for hard mask applications. In the near term we expect to see our ALD aluminum oxide-based technology applied to capacitors in the manufacturing of DRAM chips. Since 1999, we have developed other advanced ALD dielectrics including tantalum oxide, titanium oxide, zirconium oxide and hafnium oxide.

Metal Barrier Films
We have developed metal barrier films (e.g., titanium nitride and tungsten nitride), which currently offer applications for capacitor electrodes and contact barriers for DRAM chips. Metal films produced by ALD will likely be needed for interconnects below the 90nm feature size, where barrier film thickness decrease below 100 angstroms. Somewhat beyond 2005, there will be an interest in these barriers for metal gate electrodes.

Nanolaminates and Alloys
With the development of Genus ALD, we have been able to commercialize its capability of creating excellent nanolaminates and alloys. The Genus LYNX ALD system can provide the flexibility to deposit up to 3 compound films in alloy and/or nanolaminate form. The capability has become enabling for the engineering of composite films for optimal performance in next generation semiconductor devices. Composites of both dielectrics and metals barriers have been achieved.